to-92 plastic-encapsulate transistors bc327/ BC328 transistor (pnp) features power dissipation maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage bc327 BC328 -50 -30 v v ceo collector-emitter voltage bc327 BC328 -45 -25 v v ebo emitter-base voltage -5 v i c collector current -continuous -800 ma p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage bc327 BC328 v cbo i c = -100ua, i e =0 -50 -30 v collector-emitter breakdown voltage bc327 BC328 v ceo i c = -10ma , i b =0 -45 -25 v emitter-base breakdown voltage v ebo i e = -10ua, i c =0 -5 v collector cut-off current bc327 BC328 i cbo v cb = -45 v , i e =0 v cb = -25v , i e =0 -0.1 -0.1 ua collector cut-off current bc327 BC328 i ceo v ce = -40 v , i b =0 v ce = -20 v , i b =0 -0.2 -0.2 ua emitter cut-off current i ebo v eb = -4 v , i c =0 -0.1 ua h fe(1) v ce =-1 v, i c = -100ma 100 630 dc current gain h fe(2) v ce =-1 v, i c = -300ma 40 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b = -50ma -0.7 v base-emitter saturation voltage v be(sat) i c = -500ma, i b =-50ma -1.2 v base-emitter voltage v be v ce =-1 v, i c = -300ma -1.2 v transition frequency f t v ce = -5v, i c = -10ma f = 100mhz 260 mhz collector output capacitance cob v cb =-10v,i e =0 f=1mhz 12 pf classification of h fe rank 16 25 40 range 100-250 160-400 250-630 to-92 1. collector 2.base 3. emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,feb,2012
-0.1 -1 -10 1 10 100 -10 -100 10 100 1000 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 -0 -2 -4 -6 -0 -100 -200 -300 -10 -100 10 100 1000 -1 -10 -100 -0.1 -1 -0.0 -0.3 -0.6 -0.9 -1.2 -0.1 -1 -10 -100 -1 -10 -100 -0.01 -0.1 -1 -20 f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? c ob c ib capacitance c (pf) reverse voltage v r (v) common emitter v ce =-5v t a =25 transition frequency f t (mhz) collector current i c (ma) p c ?? t a collector power dissipation p c (mw) ambient temperature t a ( ) -0.3ma -0.4ma -0.5ma -0.6ma -0.8ma -1.0ma -0.9ma -0.7ma common emitter t a =25 -0.2ma i b =-0.1ma static characteristic collector current i c (ma) collector-emitter voltage v ce (v) common emitter v ce = -1v i c t a =25 t a =100 dc current gain h fe collector current i c (ma) i c f t ?? h fe ?? =10 i c v besat ?? t a =100 t a =25 base-emitter saturation voltage v besat (v) collector current i c (ma) -2 -7 -800 -800 -0.3 -800 -5 common emitter v ce =-1v bc327/BC328 v be i c ?? t a = 1 0 0 t a =2 5 collector current i c (ma) base-emmiter voltage v be (v) -800 =10 t a =100 t a =25 i c v cesat ?? collector-emitter saturation voltage v cesat (v) collector current i c (ma) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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